RESEARCH CENTER FOR MODELING AND SIMULATION IN NANOELECTRONICS

Nanoelectronics represents a strategic technology considering the wide range of possible applications such as Computing, Communications or Consumer electronics. In the semiconductor industry, Complementary Metal Oxide Semiconductor (CMOS) technology will certainly continue to have a predominant market position even after 2012. However, there are still a number of technological challenges, which have to be tackled if CMOS is to reach the 35nm channel length and 108 transistors per cm2 as predicted for 2012. This may offer opportunities for alternative nanodevices which may be integrated on a CMOS chip and enhance its functionality.

Emerging technology devices that could be considered as possible nanoelectronic circuit elements are for example Single Electron Tunneling (SET) devices, Molecular nanoelectronics or Quantum computing. However, many of the potential applications in nanoelectronics still require substantial work in order to become marketable technology. Therefore, research and development have to be quick enough to meet industrial requirements and to determine which technique is applicable for large-scale integrated circuits.

Within this objective, modeling behavior of these possible nanodevices is becoming more and more important and should allow to:

Main objectives

The main objectives of the MODSIMNANO center are:

Centre Staff

Main collaborations :

Activity reports

2010 Report

More information on MODSIMNANO Research Center is available by contacting directly: Prof. Irinel Casian-Botez (icasian@etti.tuiasi.ro)